IPB042N10N3GE818XT Infineon Technologies, IPB042N10N3GE818XT Datasheet - Page 11

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IPB042N10N3GE818XT

Manufacturer Part Number
IPB042N10N3GE818XT
Description
MOSFET OptiMOS Power Transistor
Manufacturer
Infineon Technologies
Datasheet

Specifications of IPB042N10N3GE818XT

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
4.2 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
PG-TO263-3
Fall Time
14 ns
Gate Charge Qg
88 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
214 W
Rise Time
59 ns
Typical Turn-off Delay Time
48 ns
Part # Aliases
E8187 G IPB042N10N3 IPB042N10N3GE8187ATMA1
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
Information
Warnings
IPB042N10N3 G
IPP045N10N3 G
IPI045N10N3 G

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