IPB042N10N3GE818XT Infineon Technologies, IPB042N10N3GE818XT Datasheet - Page 4

• Manufacturer Part Number: IPB042N10N3GE818XT
• Description: MOSFET OptiMOS Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB042N10N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 4.2 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 14 ns
• Gate Charge Qg: 88 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 214 W
• Rise Time: 59 ns
• Typical Turn-off Delay Time: 48 ns
• Part # Aliases: E8187 G IPB042N10N3 IPB042N10N3GE8187ATMA1

1 Power dissipation
P
3 Safe operating area
I
V
250
200
150
100
10
10
10
10
10
50
T
0
-1
3
2
1
0
10
0
-1
T
t
10
50
0
D
V
T
C
DS
100
10
[°C]
1
[V]
150
10
2
200
10
3
2 Drain current
I
4 Max. transient thermal impedance
Z
T
120
100
10
10
10
80
60
40
20
0
-1
-2
t
0
0
V
D t T
IPB042N10N3 G
50
T
t
C
100
p
[°C]
[s]
IPP045N10N3 G
IPI045N10N3 G
150
200