IPB042N10N3GE818XT Infineon Technologies, IPB042N10N3GE818XT Datasheet - Page 2

• Manufacturer Part Number: IPB042N10N3GE818XT
• Description: MOSFET OptiMOS Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB042N10N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 4.2 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 14 ns
• Gate Charge Qg: 88 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 214 W
• Rise Time: 59 ns
• Typical Turn-off Delay Time: 48 ns
• Part # Aliases: E8187 G IPB042N10N3 IPB042N10N3GE8187ATMA1

Parameter
Thermal characteristics
Electrical characteristics,
Static characteristics
T
Symbol Conditions
R
R
V
V
I
I
R
R
g
V
V
V
T
V
T
V
V
V
V
V
I
V
V
I R
I
I
I
I
V
I
I
V
V
IPB042N10N3 G
min.
Values
typ.
IPP045N10N3 G
IPI045N10N3 G
max.
Unit