IPB042N10N3GE818XT Infineon Technologies, IPB042N10N3GE818XT Datasheet - Page 5

• Manufacturer Part Number: IPB042N10N3GE818XT
• Description: MOSFET OptiMOS Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB042N10N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 4.2 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 14 ns
• Gate Charge Qg: 88 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 214 W
• Rise Time: 59 ns
• Typical Turn-off Delay Time: 48 ns
• Part # Aliases: E8187 G IPB042N10N3 IPB042N10N3GE8187ATMA1

5 Typ. output characteristics
I
7 Typ. transfer characteristics
I
V
V
400
320
240
160
200
150
100
80
50
0
0
0
0
T
V
V
T
1
I R
2
2
V
V
DS
GS
4
[V]
[V]
3
6
4
5
8
6 Typ. drain-source on resistance
R
8 Typ. forward transconductance
g
200
160
120
I
9
6
3
0
80
40
0
0
0
I
T
V
T
IPB042N10N3 G
50
50
I
I
D
D
[A]
[A]
100
IPP045N10N3 G
100
IPI045N10N3 G
150
150