IPB042N10N3GE818XT Infineon Technologies, IPB042N10N3GE818XT Datasheet - Page 6

• Manufacturer Part Number: IPB042N10N3GE818XT
• Description: MOSFET OptiMOS Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB042N10N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 4.2 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 14 ns
• Gate Charge Qg: 88 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 214 W
• Rise Time: 59 ns
• Typical Turn-off Delay Time: 48 ns
• Part # Aliases: E8187 G IPB042N10N3 IPB042N10N3GE8187ATMA1

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
10
8
6
4
2
0
4
3
2
1
-60
0
T
V
I
-20
20
f
20
V
V
T
j
DS
60
40
[°C]
[V]
100
60
140
180
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
3.5
2.5
1.5
0.5
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
0
T
I
T
V
-20
IPB042N10N3 G
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
IPP045N10N3 G
100
IPI045N10N3 G
1.5
140
180
2