IPB042N10N3GE818XT Infineon Technologies, IPB042N10N3GE818XT Datasheet - Page 7

• Manufacturer Part Number: IPB042N10N3GE818XT
• Description: MOSFET OptiMOS Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPB042N10N3GE818XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Resistance Drain-source Rds (on): 4.2 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: PG-TO263-3
• Fall Time: 14 ns
• Gate Charge Qg: 88 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 214 W
• Rise Time: 59 ns
• Typical Turn-off Delay Time: 48 ns
• Part # Aliases: E8187 G IPB042N10N3 IPB042N10N3GE8187ATMA1

13 Avalanche characteristics
I
15 Drain-source breakdown voltage
V
1000
100
110
105
100
t
10
95
90
1
-60
1
R
T
T
I
-20
10
20
t
T
AV
j
60
[°C]
[µs]
100
100
140
1000
180
14 Typ. gate charge
V
16 Gate charge waveforms
Q
V
10
V
Q
8
6
4
2
0
0
V
I
Q
IPB042N10N3 G
20
40
Q
Q
gate
g
Q
[nC]
Q
60
IPP045N10N3 G
IPI045N10N3 G
80
Q
g ate
100