NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 18

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Bus operations
4.5
4.6
18/61
Write Protect
Write Protect bus operations are used to protect the memory against program or erase
operations. When the Write Protect signal is Low the device will not accept program or erase
operations and so the contents of the memory array cannot be altered. The Write Protect
signal is not latched by Write Enable to ensure protection even during power-up.
Standby
When Chip Enable is High the memory enters standby mode, the device is deselected,
outputs are disabled and power consumption is reduced.
Table 5.
1. Only for x16 devices.
2. WP must be V
Table 6.
1. Any additional address input cycles will be ignored.
2. The fifth cycle is valid for 2-Gbit devices. A28 is for 2-Gbit devices only.
Bus cycle
Command input
Bus operation
Address input
Write Protect
Data output
Data input
5
Standby
2
3
1
4
th(2)
nd
st
rd
th
(1)
Bus operations
Address insertion, x8 devices
IH
I/O7
A19
A27
V
V
A7
when issuing a program or erase command.
IL
IL
V
V
V
V
V
E
X
IH
IL
IL
IL
IL
I/O6
A18
A26
V
AL
V
V
V
V
V
A6
X
X
IH
IL
IL
IL
IL
IL
V
CL
V
V
V
X
X
IH
IL
IL
IL
I/O5
A17
A25
V
V
A5
IL
IL
Falling
V
V
V
R
X
X
IH
IH
IH
I/O4
A16
A24
V
V
A4
Rising
Rising
Rising
IL
IL
V
W
X
X
IH
V
I/O3
A11
A15
A23
V
A3
WP
X
IL
V
V
X
X
D
IL
(2)
IH
/V
IL
NAND01G-B2B, NAND02G-B2C
D
Data output
I/O0 - I/O7
Command
Data input
I/O2
Address
A10
A14
A22
V
A2
IL
X
X
I/O1
A13
A21
V
A1
A9
IL
I/O8 - I/O15
Data output
Data input
X
X
X
X
I/O0
A12
A20
A28
A0
A8
(1)