NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 57

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND01G-B2B, NAND02G-B2C
Figure 36. VFBGA63 9.5 x 12 x 1 mm - 6 x 8 +15, 0.80 mm pitch, package outline
1. Drawing is not to scale
Table 27.
Symbol
FD1
FE1
ddd
FD
SD
SE
A1
A2
D1
D2
E1
E2
FE
A
D
E
b
e
VFBGA63 9.5 x 12 x 1 mm - 6 x 8 +15, 0.80 mm pitch, package mechanical data
12.00
1.60
0.45
9.50
4.00
7.20
5.60
8.80
0.80
2.75
1.15
3.20
0.40
0.40
Typ
E
E2
E1
millimeters
BALL "A1"
FD1
FD
e
11.90
A
0.25
0.40
9.40
Min
–
e
D2
D1
SD
D
12.10
Max
1.05
0.70
0.50
9.60
0.10
–
b
FE1
A1
e
SE
A2
0.018
0.374
0.157
0.283
0.472
0.220
0.346
0.031
0.108
0.045
0.126
0.063
0.016
0.016
FE
Typ
BGA-Z67
ddd
inches
0.010
0.016
0.370
0.468
Min
–
Package mechanical
0.041
0.028
0.020
0.378
0.004
0.476
Max
–
57/61