NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 51

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

NAND01G-B2B, NAND02G-B2C
Figure 26. Page program AC waveforms
1. A fifth address cycle is required for 2-Gbit devices only.
RB
CL
I/O
AL
W
R
E
Page Program
Setup Code
80h
tWLWL
(Write Cycle time)
cycle 1
Add.N
cycle 2
Add.N
cycle 3
Add.N
Address Input
cycle 4
Add.N
cycle 5
Add.N
tWLWL
N
tWHWH
Data Input
(Program Busy time)
tWHBL
Last
Confirm
tBLBH2
Code
tWLWL
10h
Program
Page
DC and AC parameters
Read Status Register
70h
SR0
ai13110b
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