NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 58

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Package mechanical
Figure 37. VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.80 mm pitch, package outline
1. Drawing is not to scale
Table 28.
58/61
Symbol
FD1
FE1
ddd
SD
D1
D2
FD
FE
SE
A1
A2
E1
E2
A
D
E
b
e
VFBGA63 9 x 11 x 1.05 mm - 6 x 8 +15, 0.80 mm pitch, package mechanical data
E
E2
11.00
0.65
0.45
9.00
4.00
7.20
5.60
8.80
0.80
2.50
0.90
2.70
1.10
0.40
0.40
Typ
BALL "A1"
FD1
E1
A
millimeters
e
10.90
0.25
0.40
8.90
Min
–
–
–
SD
D2
D1
D
FD
11.10
Max
1.05
0.50
9.10
0.10
A1
–
–
–
e
SE
b
FE1
A2
FE
0.026
0.018
0.354
0.157
0.283
0.433
0.220
0.346
0.031
0.098
0.035
0.106
0.043
0.016
0.016
Typ
NAND01G-B2B, NAND02G-B2C
BGA-Z75
inches
0.010
0.016
0.350
0.429
ddd
Min
–
–
–
0.041
0.020
0.358
0.004
0.437
Max
–
–
–