AT45DB161D-TU Atmel, AT45DB161D-TU Datasheet - Page 10

• Manufacturer Part Number: AT45DB161D-TU
• Description: IC FLASH 16MBIT 66MHZ 28TSOP
• Manufacturer: Atmel

Specifications of AT45DB161D-TU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 16M (4096 pages x 528 bytes)
• Speed: 66MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP
• Memory Configuration: 4096 Pages X 528 Bytes
• Interface Type: Serial, SPI
• Clock Frequency: 66MHz
• Supply Voltage Range: 2.5V To 3.6V, 2.7V To 3.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.6
Table 7-2.
7.7
10
PA11/
A20
0
0
0
0
1
1
1
1
•
•
•
Sector Erase
Chip Erase
PA10/
AT45DB161D
A19
0
0
0
0
1
1
1
1
•
•
•
Sector Erase Addressing
PA9/
A18
0
0
0
1
0
0
1
1
•
•
•
(1)
The Sector Erase command can be used to individually erase any sector in the main memory.
There are 16 sectors and only one sector can be erased at one time. To perform sector 0a or
sector 0b erase for the standard DataFlash page size (528 bytes), an opcode of 7CH must be
loaded into the device, followed by three address bytes comprised of 2 don’t care bits, 9 page
address bits (PA11 - PA3) and 13 don’t care bits. To perform a sector 1-15 erase, the opcode
7CH must be loaded into the device, followed by three address bytes comprised of 2 don’t care
bits, 4 page address bits (PA11 - PA8) and 18 don’t care bits. To perform sector 0a or sector 0b
erase for the binary page size (512 bytes), an opcode of 7CH must be loaded into the device,
followed by three address bytes comprised of 3 don’t care bit and 9 page address bits (A20 -
A12) and 12 don’t care bits. To perform a sector 1-15 erase, the opcode 7CH must be loaded
into the device, followed by three address bytes comprised of 3 don’t care bit and 4 page
address bits (A20 - A17) and 17 don’t care bits. The page address bits are used to specify any
valid address location within the sector which is to be erased. When a low-to-high transition
occurs on the CS pin, the part will erase the selected sector. The erase operation is internally
self-timed and should take place in a maximum time of t
and the RDY/BUSY pin will indicate that the part is busy.
The entire main memory can be erased at one time by using the Chip Erase command.
To execute the Chip Erase command, a 4-byte command sequence C7H, 94H, 80H and 9AH
must be clocked into the device. Since the entire memory array is to be erased, no address
bytes need to be clocked into the device, and any data clocked in after the opcode will be
ignored. After the last bit of the opcode sequence has been clocked in, the CS pin can be deas-
serted to start the erase process. The erase operation is internally self-timed and should take
place in a time of t
The Chip Erase command will not affect sectors that are protected or locked down; the contents
of those sectors will remain unchanged. Only those sectors that are not protected or locked
down will be erased.
Note:
PA8/
A17
0
0
1
0
0
1
0
1
•
•
•
1. Refer to the errata regarding Chip Erase on
PA7/
A16
X
X
X
X
X
X
0
0
•
•
•
PA6/
A15
CE
X
X
X
X
X
X
0
0
•
•
•
. During this time, the Status Register will indicate that the device is busy.
PA5/
A14
X
X
X
X
X
X
0
0
•
•
•
PA4/
A13
X
X
X
X
X
X
0
0
•
•
•
PA3/
A12
X
X
X
X
X
X
0
1
•
•
•
page
PA2/
A11
X
X
X
X
X
X
X
X
•
•
•
52.
SE
. During this time, the status register
PA1/
A10
X
X
X
X
X
X
X
X
•
•
•
PA0/
A9
X
X
X
X
X
X
X
X
•
•
•
3500I–DFLASH–8/07
Sector
0a
0b
12
13
14
15
1
2
•
•
•