AT45DB161D-TU Atmel, AT45DB161D-TU Datasheet - Page 22

• Manufacturer Part Number: AT45DB161D-TU
• Description: IC FLASH 16MBIT 66MHZ 28TSOP
• Manufacturer: Atmel

Specifications of AT45DB161D-TU

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 16M (4096 pages x 528 bytes)
• Speed: 66MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-TSOP
• Memory Configuration: 4096 Pages X 528 Bytes
• Interface Type: Serial, SPI
• Clock Frequency: 66MHz
• Supply Voltage Range: 2.5V To 3.6V, 2.7V To 3.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11.2
11.3
22
Main Memory Page to Buffer Compare
Auto Page Rewrite
AT45DB161D
A page of data in main memory can be compared to the data in buffer 1 or buffer 2. To initiate
the operation for standard DataFlash page size, a 1-byte opcode, 60H for buffer 1 and 61H for
buffer 2, must be clocked into the device, followed by three address bytes consisting of 2 don’t
care bits, 12 page address bits (PA11 - PA0) that specify the page in the main memory that is to
be compared to the buffer, and 10 don’t care bits. To start a main memory page to buffer com-
pare for a binary page size, the opcode 60H for buffer 1 or 61H for buffer 2, must be clocked into
the device followed by three address bytes consisting of 3 don’t care bits, 12 page address bits
(A20 - A9) that specify the page in the main memory that is to be compared to the buffer, and 9
don’t care bits. The CS pin must be low while toggling the SCK pin to load the opcode and the
address bytes from the input pin (SI). On the low-to-high transition of the CS pin, the data bytes
in the selected main memory page will be compared with the data bytes in buffer 1 or buffer 2.
During this time (t
busy. On completion of the compare operation, bit 6 of the status register is updated with the
result of the compare.
This mode is only needed if multiple bytes within a page or multiple pages of data are modified in
a random fashion within a sector. This mode is a combination of two operations: Main Memory
Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in Erase. A page of
data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data
(from buffer 1 or buffer 2) is programmed back into its original page of main memory. To start the
rewrite operation for standard DataFlash page size (528 bytes), a 1-byte opcode, 58H for buffer
1 or 59H for buffer 2, must be clocked into the device, followed by three address bytes com-
prised of 2 don’t care bits, 12 page address bits (PA11-PA0) that specify the page in main
memory to be rewritten and 10 don’t care bits. To initiate an auto page rewrite for a binary page
size (512 bytes), the opcode 58H for buffer 1 or 59H for buffer 2, must be clocked into the device
followed by three address bytes consisting of 3 don’t care bits, 12 page address bits (A20 - A9)
that specify the page in the main memory that is to be written and 9 don’t care bits. When a low-
to-high transition occurs on the CS pin, the part will first transfer data from the page in main
memory to a buffer and then program the data from the buffer back into same page of main
memory. The operation is internally self-timed and should take place in a maximum time of t
During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.
If a sector is programmed or reprogrammed sequentially page by page, then the programming
algorithm shown in
page or several pages are programmed randomly in a sector, then the programming algorithm
shown in
updated/rewritten at least once within every 10,000 cumulative page erase/program operations
in that sector.
Figure 25-2 (page
COMP
Figure 25-1 (page
), the status register and the RDY/BUSY pin will indicate that the part is
46) is recommended. Each page within a sector must be
45) is recommended. Otherwise, if multiple bytes in a
3500I–DFLASH–8/07
EP
.