AT45DB161D-TU Atmel, AT45DB161D-TU Datasheet - Page 46

IC FLASH 16MBIT 66MHZ 28TSOP

AT45DB161D-TU

Manufacturer Part Number
AT45DB161D-TU
Description
IC FLASH 16MBIT 66MHZ 28TSOP
Manufacturer
Atmel
Datasheets

Specifications of AT45DB161D-TU

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
16M (4096 pages x 528 bytes)
Speed
66MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP
Memory Configuration
4096 Pages X 528 Bytes
Interface Type
Serial, SPI
Clock Frequency
66MHz
Supply Voltage Range
2.5V To 3.6V, 2.7V To 3.6V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 25-2. Algorithm for Randomly Modifying Data
Notes:
46
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
AT45DB161D
cumulative page erase and program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
(53H, 55H)
(58H, 59H)
START
END
provide address of
page to modify
MEMORY PAGE PROGRAM
(2)
(2)
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
3500I–DFLASH–8/07

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