NAND01GW3B2AN6E STMicroelectronics, NAND01GW3B2AN6E Datasheet - Page 14
NAND01GW3B2AN6E
Manufacturer Part Number
NAND01GW3B2AN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
STMicroelectronics
Datasheet
1.NAND01GW3B2CN6E.pdf
(61 pages)
Specifications of NAND01GW3B2AN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
497-4617
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2AN6E
Manufacturer:
STC
Quantity:
1 400
Memory array organization
Figure 5.
14/61
Block
Page
Memory array organization
2048 bytes
Main area
Page buffer, 2112 bytes
2,048 bytes
Block = 64 pages
Page = 2112 bytes (2,048 + 64)
x8 DEVICES
bytes
bytes
64
64
8 bits
8 bits
Block
Page
1024 words
1,024 words
Main area
Page buffer, 1056 words
Block = 64 pages
Page = 1056 words (1024 + 32)
NAND01G-B2B, NAND02G-B2C
x16 DEVICES
words
words
32
32
16 bits
16 bits
AI09854