NAND01GW3B2AN6E STMicroelectronics, NAND01GW3B2AN6E Datasheet - Page 40

• Manufacturer Part Number: NAND01GW3B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW3B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 497-4617

Program and erase times and endurance cycles
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Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 18.
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Table
18.
Program, erase times and program erase endurance cycles
Parameters
100 000
Min
10
NAND flash
NAND01G-B2B, NAND02G-B2C
Typ
200
2
Max
700
3
cycles
years
Unit
ms
µs