NAND01GW3B2AN6E STMicroelectronics, NAND01GW3B2AN6E Datasheet - Page 59

• Manufacturer Part Number: NAND01GW3B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW3B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 497-4617

NAND01G-B2B, NAND02G-B2C
13
Note:
Ordering information
Table 29.
1. x16 organization only available for MCP products.
2. For NAND02G-B2C devices only.
3. For NAND01G-B2B devices only.
Not all combinations are necessarily available. For a list of available devices or for further
information on any aspect of these products, please contact your nearest Numonyx sales
office.
Example:
Device type
NAND flash memory
Density
01G = 1 Gbit
02G = 2 Gbits
Operating voltage
R = V
W = V
Bus width
3 = x8
4 = x16
Family identifier
B = 2112-byte/1056-word page
Device options
2 = chip enable don't care enabled
Product version
B = second version (1-Gbit devices)
C = third version (2-Gbit devices)
Package
N = TSOP48 12 x 20 mm
ZA = VFBGA63 9.5 x 12 x 1 mm, 0.8 mm pitch
ZA= VFBGA63 9 x 11 x 1.05 mm, 0.8 mm pitch
Temperature range
6 = –40 to 85 °C
Option
E = RoHS compliant package, standard packing
F = RoHS compliant package, tape & reel packing
DD
DD
(1)
= 1.7 to 1.95 V
= 2.7 to 3.6 V
Ordering information scheme
(2)
(3)
NAND02GR3B2C ZA 6
Ordering information
E
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