NAND01GW3B2AN6E STMicroelectronics, NAND01GW3B2AN6E Datasheet - Page 8

• Manufacturer Part Number: NAND01GW3B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW3B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 497-4617

Description
Table 2.
1. x16 organization only available for MCP.
8/61
Reference
NAND01G
NAND02G
-B2C
-B2B
NAND01GW3B2B
NAND01GW4B2B
NAND02GW3B2C
NAND02GW4B2C
NAND02GR3B2C
NAND02GR4B2C
NAND01GR3B2B
NAND01GR4B2B
Part number
For information on how to order these options refer to
scheme. Devices are shipped from the factory with block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
See
Product description
Table 2: Product
Density
2Gbits
1Gbit
width
Bus
x16
x16
x8
x8
description, for all the devices available in the family.
words
words
Page
bytes
bytes
2048
1024
2048
1024
size
+64
+32
+64
+32
Block
words
words
bytes
bytes
128K
64K+
128K
64K+
size
+4K
+4K
2K
2K
Memory
pages x
pages x
blocks
blocks
array
1024
2048
64
64
Operating
voltage
1.95 V
1.95 V
1.95 V
1.95 V
1.7 to
2.7 to
1.7 to
2.7 to
1.7 to
2.7 to
1.7 to
2.7 to
3.6 V
3.6 V
3.6 V
3.6 V
Random
access
(max)
25 µs
25 µs
25 µs
25 µs
25 µs
25 µs
25 µs
25 µs
Table 29: Ordering information
time
NAND01G-B2B, NAND02G-B2C
Sequential
access
(min)
50 ns
30 ns
50 ns
30 ns
50 ns
30 ns
50 ns
30 ns
time
Timings
Progra
m time
200 µs
Page
(typ)
erase
Bloc
(typ)
2 ms
2 ms
k
VFBGA63
VFBGA63
9.5 x 12 x
Package
1.05 mm
TSOP48
TSOP48
9 x 11 x
1 mm
(1)
(1)
(1)
(1)