NAND01GW3B2AN6E STMicroelectronics, NAND01GW3B2AN6E Datasheet - Page 53

• Manufacturer Part Number: NAND01GW3B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW3B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 497-4617

NAND01G-B2B, NAND02G-B2C
Figure 29. Program/erase enable waveforms
Figure 30. Program/erase disable waveforms
11.1
RB
RB
WP
WP
I/O
I/O
W
W
Ready/Busy signal electrical characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
High
32,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 31
tVHWH
tVLWH
80h
80h
and
Figure 33
R P min
R P min 1.8V
R P min 3V
show the electrical characteristics for the Ready/Busy
=
(
-------------------------------------------------------------
(
V DDmax V OLmax
(
)
P
)
=
I OL
=
can be calculated using the following equation:
r
-------------------------- -
8mA
.
-------------------------- -
3mA
–
3.2V
+
1.85V
+
I L
+
I L
I L
10h
10h
)
DC and AC parameters
ai12477
ai12478
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P