NAND01GW3B2AN6E STMicroelectronics, NAND01GW3B2AN6E Datasheet - Page 52

• Manufacturer Part Number: NAND01GW3B2AN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: STMicroelectronics

Specifications of NAND01GW3B2AN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Other names: 497-4617

DC and AC parameters
Figure 27. Block erase AC waveforms
1. Address cycle 3 is required for 2-Gbit devices only.
Figure 28. Reset AC waveforms
52/61
RB
I/O
AL
CL
W
R
I/O
RB
R
CL
AL
W
E
Setup Command
Block Erase
60h
FFh
(Write Cycle time)
cycle 1
tWLWL
Add.
Block Address Input
cycle 2
Add.
cycle 3
Add.
tWHBL
(Reset Busy time)
tBLBH4
Confirm
D0h
Code
Block Erase
(Erase Busy time)
tBLBH3
NAND01G-B2B, NAND02G-B2C
70h
Read Status Register
SR0
ai08043
ai08038b