MD4832-D512-V3Q18-X/Y SanDisk, MD4832-D512-V3Q18-X/Y Datasheet - Page 40

• Manufacturer Part Number: MD4832-D512-V3Q18-X/Y
• Description: IC MDOC G3 512MB 85-FBGA
• Manufacturer: SanDisk

Specifications of MD4832-D512-V3Q18-X/Y

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 585-1140

4.
Mobile DiskOnChip G3 enhances performance using various proprietary techniques:
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4.1
MultiBurst operation is especially effective for large file reads that are typical during boot-up.
During MultiBurst operation, data is read from the two flash planes in parallel through a 32-bit wide
internal flash interface. Data is read by the host one 16-bit word after another using the CLK input,
resulting in a MultiBurst read mode of up to 80 MB/sec. MultiBurst operation can only be
performed on hosts that support burst reads. See Figure 15 below.
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Parallel access to the separate 256Mb flash planes, thereby providing an internal 32-bit data
bus. See Section 3.10 for further information.
MultiBurst operation to read large chunks of data, providing a MultiBurst read speed of up to
80 MB/sec.
DMA operation to release the CPU for other tasks in coordination with the platform’s DMA
controller. This is especially useful during the boot stage. Up to 64KB of data can be
transferred during a DMA operation.
Turbo operation to enhance read access time from 55 ns to 33 ns (standard interface, access to
flash addresses).
X
MultiBurst Operation
2 T
ECHNOLOGY
Preliminary Data Sheet, Rev. 1.1
Mobile DiskOnChip G3
91-SR-011-05-8L