MD4832-D512-V3Q18-X/Y SanDisk, MD4832-D512-V3Q18-X/Y Datasheet - Page 81

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MD4832-D512-V3Q18-X/Y

Manufacturer Part Number
MD4832-D512-V3Q18-X/Y
Description
IC MDOC G3 512MB 85-FBGA
Manufacturer
SanDisk
Datasheet

Specifications of MD4832-D512-V3Q18-X/Y

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
585-1140

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MD4832-D512-V3Q18-X/Y
Manufacturer:
SanDisk
Quantity:
10 000
10.2.2 Capacitance
10.2.3 DC Electrical Characteristics over Operating Range
See Table 12 and Table 13 for DC characteristics for VCCQ ranges 1.65-2.0V and 2.5-3.6V I/O,
respectively.
78
Symbol
Capacitance is not 100% tested.
VCCQ
VCC
I
V
I
Symbol
V
V
V
I
IOLK
I
CCS
ILK
CC
OH
OL
1.
2.
3.
C
IH
IL
C
OUT
IN
VCC = 3V,
The CE# input includes a pull-up resistor which sources 0.3~1.4 (TBD) uA at Vin=0V
Deep Power-Down mode is achieved by asserting RSTIN# (when in Normal mode) or writing the proper write sequence to the
DiskOnChip registers, and asserting the CE# input = VCCQ.
Core supply voltage
Input/Output supply voltage
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
(512Mb device)
Input leakage current
(1Gb device)
Output leakage current
(512Mb device)
Output leakage current
(1Gb device)
Active supply current
Standby supply current,
(512Mb device)
Standby supply current,
(1Gb device)
Input capacitance (512Mb device)
Input capacitance (1Gb device)
Output capacitance (512Mb device)
Output capacitance (1Gb device)
VCCQ
Parameter
= 1.8V, Outputs open
Parameter
Table 12: DC Characteristics, VCCQ = 1.65-2.0V I/O
1
2
2
Preliminary Data Sheet, Rev. 1.1
I
D[15:0] I
IRQ#, BUSY#, DMARQ#
4mA
Read
Program
Erase
Cycle Time = 100 ns
Deep Power-Down mode³
Deep Power-Down mode³
OH
Table 11: Capacitance
= -100µA
Conditions
OL
= 100µA
Conditions
V
V
IN
O
= 0V
= 0V
VCCQ – 0.4
VCCQ – 0.1
Min
1.65
Min
2.5
TBD
TBD
TBD
TBD
Typ
Typ
3.0
1.8
4.2
7.2
7.2
10
20
Mobile DiskOnChip G3
Max
10
20
10
20
91-SR-011-05-8L
Max
2.00
±10
±20
±10
±20
3.6
0.4
0.1
0.3
25
40
80
Unit
pF
pF
pF
pF
Unit
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V

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