MT8VDDT6432UY-5K1 Micron Technology Inc, MT8VDDT6432UY-5K1 Datasheet - Page 21

• Manufacturer Part Number: MT8VDDT6432UY-5K1
• Description: MODULE DDR 256MB 100-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6432UY-5K1

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 400MT/s
• Package / Case: 100-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 14:
Table 15:
pdf: 09005aef80745603, source: 09005aef807455eb
DD8C32_64_128x32UG_2.fm - Rev. G 5/05 EN
Parameter
AC Characteristics
Parameter
Input/Output Capacitance: DQ, DQS, DM
Input Capacitance: Command and Address
Input Capacitance: S#; CK/CK#; CKE
Access window of DQ from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to
DQS
DQ and DM input setup time relative to
DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per
access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup
time
DQS falling edge from CK rising - hold
time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ–DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
Capacitance (All Modules)
Note: 11; notes appear on pages 23–27
Component Electrical Characteristics and Recommended AC Operating Conditions
Notes: 1–5, 12–15, 29, 48; notes appear on pages 23–27; 0°C ≤ T
CL = 2.5
CL = 2
128MB, 256MB, 512MB: (x32, DR) 100-Pin DDR UDIMM
Symbol
t
t
21
CK (2.5)
t
t
t
t
DQSCK
t
t
t
CK (2)
DQSQ
DQSH
DIPW
t
t
t
DQSL
DQSS
t
t
t
MRD
t
t
t
QHS
t
t
DSH
t
t
t
t
RAP
t
t
IPW
RAS
t
DSS
t
t
t
RFC
QH
DH
AC
CH
DS
HP
HZ
IH
IH
RC
CL
IS
IS
LZ
F
S
F
S
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
Min
0.45
0.45
0.45
0.45
1.75
0.35
0.35
0.75
0.75
0.75
-0.6
-0.7
-0.7
QHS
HP -
7.5
0.2
0.2
0.8
0.8
2.2
12
42
15
60
72
6
t
CH,
A
-6
Symbol
≤ +70°C; V
t
CL
70,000
+0.70
C
C
C
Max
+0.7
+0.6
0.55
0.55
0.45
1.25
0.6
IO
I1
I2
13
13
DD
7.5/10
t
-0.75
-0.75
-0.75
t
Min
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
QHS
HP -
0.5
0.5
0.2
2.2
7.5
0.2
15
40
20
65
75
1
1
©2004, 2005 Micron Technology, Inc. All rights reserved.
= +2.5V ±0.2V
-75Z/-75
t
CH,
Min
120,000
t
16
CL
+0.75
+0.75
+0.75
8
8
Max
Parameter Tables
0.55
0.55
1.25
0.75
0.5
13
13
Max
10
24
12
Units
t
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
CK
CK
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
Notes
40, 46
40, 46
23, 27
23, 27
22, 23
16, 37
16, 37
22, 23
31, 49
pF
pF
pF
26
26
27
30
12
12
12
12
44