MT8VDDT6432UY-5K1 Micron Technology Inc, MT8VDDT6432UY-5K1 Datasheet - Page 25

• Manufacturer Part Number: MT8VDDT6432UY-5K1
• Description: MODULE DDR 256MB 100-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6432UY-5K1

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 400MT/s
• Package / Case: 100-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 7:
pdf: 09005aef80745603, source: 09005aef807455eb
DD8C32_64_128x32UG_2.fm - Rev. G 5/05 EN
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
50/50
3.750
2.500
Derating Data Valid Window
N/A
49.5/50.5
-75/-75Z @
-75/-75Z @
-6 @
3.700
2.463
t
30.
31. READs and WRITEs with auto precharge are not allowed to be issued until
32. Any positive glitch to the nominal voltage must be less than 1/3 of the clock and not
33. Normal Output Drive Curves:
CK = 6ns
t
device CK and CK/ inputs, collectively during bank active.
can be satisfied prior to the internal precharge command being issued.
more than +400mV or 2.9 volts maximum, whichever is less. Any negative glitch must
be less than 1/3 of the clock cycle and not exceed either -300mV or 2.2 volts mini-
mum, whichever is more positive.
t
t
CK = 10ns
CK = 7.5ns
HP min is the lesser of
b. The variation in driver pull-down current within nominal limits of voltage and
d. The variation in driver pull-up current within nominal limits of voltage and tem-
a. The full variation in driver pull-down current from minimum to maximum pro-
c. The full variation in driver pull-up current from minimum to maximum process,
49/51
3.650
2.425
cess, temperature and voltage will lie within the outer bounding lines of the V-I
curve of Figure 8, Pull-Down Characteristics.
temperature is expected, but not guaranteed, to lie within the inner bounding
lines of the V-I curve of Figure 8, Pull-Down Characteristics.
temperature and voltage will lie within the outer bounding lines of the V-I curve
of Figure 9, Pull-Up Characteristics.
perature is expected, but not guaranteed, to lie within the inner bounding lines
of the V-I curve of Figure 9, Pull-Up Characteristics.
48.5/52.5
3.600
2.388
128MB, 256MB, 512MB: (x32, DR) 100-Pin DDR UDIMM
t
QH -
3.550
48/52
2.350
t
Clock Duty Cycle
(DQSQ)
t
CL minimum and
25
47.5/53.5
3.500
2.313
Micron Technology, Inc., reserves the right to change products or specifications without notice.
47/53
3.450
2.275
t
CH minimum actually applied to the
46.5/54.5
3.400
2.238
©2004, 2005 Micron Technology, Inc. All rights reserved.
3.350
46/54
2.200
45.5/55.5
3.300
2.163
t
RAS (MIN)
3.250
45/55
Notes
2.125