MT8VDDT6432UY-5K1 Micron Technology Inc, MT8VDDT6432UY-5K1 Datasheet - Page 22

• Manufacturer Part Number: MT8VDDT6432UY-5K1
• Description: MODULE DDR 256MB 100-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6432UY-5K1

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 400MT/s
• Package / Case: 100-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15:
pdf: 09005aef80745603, source: 09005aef807455eb
DD8C32_64_128x32UG_2.fm - Rev. G 5/05 EN
AC Characteristics
Parameter
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval 128MB
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ
command
Exit SELF REFRESH to READ command
Component Electrical Characteristics and Recommended AC Operating Conditions
(Continued)
DD
256MB, 512MB
128MB
256MB, 512MB
128MB, 256MB, 512MB: (x32, DR) 100-Pin DDR UDIMM
Symbol
t
22
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
RCD
RRD
REFI
VTD
t
WR
na
RP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
0.25
200
0.9
0.4
0.4
t
15
15
12
15
75
0
1
QH -
0
-6
t
DQSQ
Max
70.3
15.6
140
1.1
0.6
0.6
7.8
Min
0.25
200
0.4
0.9
0.4
20
20
15
15
75
t
0
1
0
QH -
©2004, 2005 Micron Technology, Inc. All rights reserved.
-75Z/-75
t
DQSQ
140.6
Max
Parameter Tables
70.3
15.6
1.1
0.6
0.6
7.8
Units
t
t
t
t
t
t
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
Notes
18, 19
38
38
17
22
21
21
21
21