LPC1114FBD48/301,1 NXP Semiconductors, LPC1114FBD48/301,1 Datasheet - Page 48

• Manufacturer Part Number: LPC1114FBD48/301,1
• Description: IC MCU 32BIT 32KB FLASH 48LQFP
• Manufacturer: NXP Semiconductors
• Series: LPC1100r

Specifications of LPC1114FBD48/301,1

• Program Memory Type: FLASH
• Program Memory Size: 32KB (32K x 8)
• Package / Case: 48-LQFP
• Core Processor: ARM Cortex-M0
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 42
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: LPC11
• Core: ARM Cortex M0
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, SPI, UART
• Number Of Programmable I/os: 28
• Operating Supply Voltage: 1.8 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2, KSK-LPC1114
• Development Tools By Supplier: OM11049, OM11085
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 622-1005 - USB IN-CIRCUIT PROG ARM7 LPC2K
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4950; 935290789151

NXP Semiconductors
10. Dynamic characteristics
LPC1111_12_13_14
Product data sheet
10.1 Power-up ramp conditions
10.2 Flash memory
Table 11.
T
[1]
[2]
Table 12.
T
[1]
[2]
Symbol Parameter
t
t
V
Symbol
N
t
t
t
r
wait
ret
er
prog
amb
amb
Fig 24. Power-up ramp
I
endu
See
The wait time specifies the time the power supply must be at levels below 400 mV before ramping up.
Number of program/erase cycles.
Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash
in blocks of 256 bytes.
= −40 °C to +85 °C.
= −40 °C to +85 °C, unless otherwise specified.
Figure
Condition: 0 < V
rise time
wait time
input voltage
Power-up characteristics
Flash characteristics
Parameter
endurance
retention time
erase time
programming
time
24.
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 10 February 2011
I
≤ 400 mV at start of power-up (t = t
400 mV
Conditions
at t = t
at t = t
V
DD
0
Conditions
powered
unpowered
sector or multiple
consecutive
sectors
1
1
: 0 < V
on pin V
I
≤ 400 mV
DD
t = t
1
32-bit ARM Cortex-M0 microcontroller
[1]
[2]
1
)
LPC1111/12/13/14
Min
10000
10
20
95
0.95
t
wait
[1][2]
t
r
[1]
002aag001
Min
0
12
0
Typ
100000
-
-
100
1
Typ
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
500
-
400
Max
-
-
-
105
1.05
48 of 66
Unit
ms
μs
mV
Unit
cycles
years
years
ms
ms