C8051F353-GM Silicon Laboratories Inc, C8051F353-GM Datasheet - Page 121

• Manufacturer Part Number: C8051F353-GM
• Description: IC 8051 MCU 8K FLASH 28MLP
• Manufacturer: Silicon Laboratories Inc
• Series: C8051F35xr

Specifications of C8051F353-GM

• Program Memory Type: FLASH
• Program Memory Size: 8KB (8K x 8)
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Core Processor: 8051
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: SMBus (2-Wire/I²C), SPI, UART/USART
• Peripherals: POR, PWM, Temp Sensor, WDT
• Number Of I /o: 17
• Ram Size: 768 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x16b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: C8051F3x
• Core: 8051
• Data Bus Width: 8 bit
• Data Ram Size: 768 B
• Interface Type: I2C/SMBus/SPI/UART
• Maximum Clock Frequency: 50 MHz
• Number Of Programmable I/os: 17
• Number Of Timers: 4
• Operating Supply Voltage: 2.7 V to 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
• Development Tools By Supplier: C8051F350DK
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 16-bit
• On-chip Dac: 2-ch x 8-bit
• No. Of I/o's: 17
• Ram Memory Size: 768Byte
• Cpu Speed: 50MHz
• No. Of Timers: 4
• Rohs Compliant: Yes
• Package: 28QFN
• Device Core: 8051
• Family Name: C8051F35x
• Maximum Speed: 50 MHz
• Data Rom Size: 128 B
• Height: 0.88 mm
• Length: 5 mm
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Width: 5 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: 770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1083 - DEV KIT FOR F350/351/352/353
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 336-1273

15. Flash Memory
On-chip, re-programmable Flash memory is included for program code and non-volatile data storage. The
Flash memory can be programmed in-system through the C2 interface or by software using the MOVX
instruction. Once cleared to logic 0, a Flash bit must be erased to set it back to logic 1. Flash bytes would
typically be erased (set to 0xFF) before being reprogrammed. The write and erase operations are automat-
ically timed by hardware for proper execution; data polling to determine the end of the write/erase opera-
tion is not required. Code execution is stalled during a Flash write/erase operation. Refer to Table 15.1 for
complete Flash memory electrical characteristics.
15.1. Programming The Flash Memory
The simplest means of programming the Flash memory is through the C2 interface using programming
tools provided by Silicon Labs or a third party vendor. This is the only means for programming a non-initial-
ized device. For details on the C2 commands to program Flash memory, see Section “25. C2 Interface’ on
page 229.
To ensure the integrity of Flash contents, it is strongly recommended that the on-chip V
be enabled in any system that includes code that writes and/or erases Flash memory from soft-
ware.
15.1.1. Flash Lock and Key Functions
Flash writes and erases by user software are protected with a lock and key function. The Flash Lock and
Key Register (FLKEY) must be written with the correct key codes, in sequence, before Flash operations
may be performed. The key codes are: 0xA5, 0xF1. The timing does not matter, but the codes must be
written in order. If the key codes are written out of order, or the wrong codes are written, Flash writes and
erases will be disabled until the next system reset. Flash writes and erases will also be disabled if a Flash
write or erase is attempted before the key codes have been written properly. The Flash lock resets after
each write or erase; the key codes must be written again before a following Flash operation can be per-
formed. The FLKEY register is detailed in SFR Definition 15.2.
15.1.2. Flash Erase Procedure
The Flash memory can be programmed by software using the MOVX write instruction with the address and
data byte to be programmed provided as normal operands. Before writing to Flash memory using MOVX,
Flash write operations must be enabled by: (1) setting the PSWE Program Store Write Enable bit
(PSCTL.0) to logic 1 (this directs the MOVX writes to target Flash memory); and (2) Writing the Flash key
codes in sequence to the Flash Lock register (FLKEY). The PSWE bit remains set until cleared by soft-
ware.
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire 512-byte page, perform the following steps:
Step 1. Disable interrupts (recommended).
Step 2. Set thePSEE bit (register PSCTL).
Step 3. Set the PSWE bit (register PSCTL).
Step 4. Write the first key code to FLKEY: 0xA5.
Step 5. Write the second key code to FLKEY: 0xF1.
Step 6. Using the MOVX instruction, write a data byte to any location within the 512-byte page to
Step 7. Clear the PSWE and PSEE bits.
Step 8. Re-enable interrupts.
be erased.
Rev. 1.1
C8051F350/1/2/3
DD
Monitor
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