ATTINY461V-10SU Atmel, ATTINY461V-10SU Datasheet - Page 183

IC MCU AVR 4K FLASH 10MHZ 20SOIC

ATTINY461V-10SU

Manufacturer Part Number
ATTINY461V-10SU
Description
IC MCU AVR 4K FLASH 10MHZ 20SOIC
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY461V-10SU

Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Processor Series
ATTINY4x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
2-Wire, SPI, USI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
16
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
Package
20SOIC W
Device Core
AVR
Family Name
ATtiny
Maximum Speed
10 MHz
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32ATAVRBC100 - REF DESIGN KIT BATTERY CHARGER770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAG770-1004 - ISP 4PORT FOR ATMEL AVR MCU SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATTINY461V-10SU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
ATTINY461V-10SUR
Manufacturer:
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18.7.7
2588E–AVR–08/10
Reading the Flash
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to
Data loading):
Figure 18-6. Programming the EEPROM Waveforms
The algorithm for reading the Flash memory is as follows (refer to
page 180
RESET +12V
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. C: Load Data (0x00 - 0xFF).
5. E: Latch data (give PAGEL a positive pulse).
6. K: Repeat 3 through 5 until the entire buffer is filled.
7. L: Program EEPROM page
1. A: Load Command “0000 0010”.
2. G: Load Address High Byte (0x00 - 0xFF).
3. B: Load Address Low Byte (0x00 - 0xFF).
4. Set OE to “0”, and BS1 to “0”. The Flash word low byte can now be read at DATA.
5. Set BS to “1”. The Flash word high byte can now be read at DATA.
6. Set OE to “1”.
PAGEL/BS1
RDY/BSY
XA1/BS2
XTAL1
DATA
a. Set BS to “0”.
b. Give WR a negative pulse. This starts programming of the EEPROM page.
c. Wait until to RDY/BSY goes high before programming the next page (See
XA0
WR
OE
RDY/BSY goes low.
18-6
for details on Command and Address loading):
for signal waveforms).
0x11
A
“Programming the Flash” on page 180
ADDR. HIGH
G
ADDR. LOW
B
DATA
C
XX
E
ADDR. LOW
B
for details on Command, Address and
DATA
C
K
XX
E
“Programming the Flash” on
L
Figure
183

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