MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 31

• Manufacturer Part Number: MM908E625ACDWB
• Description: IC QUAD HALF BRDG MCU/LIN 54SOIC
• Manufacturer: Freescale Semiconductor

Specifications of MM908E625ACDWB

• Applications: Automotive Mirror Control
• Core Processor: HC08
• Program Memory Type: FLASH (16 kB)
• Controller Series: 908E
• Ram Size: 512 x 8
• Interface: SCI, SPI
• Number Of I /o: 13
• Voltage - Supply: 8 V ~ 18 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 54-SOIC (0.300", 7.50mm Width) Exposed Pad
• Program Memory Size: 16 KB
• Number Of Programmable I/os: 54
• Number Of Timers: 16
• Operating Supply Voltage: - 18 V to + 28 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

HALL-EFFECT SENSOR INPUT PIN STATUS
REGISTER (HASTAT)
effect sensor input pin Hx is enabled (HxEN = 1). Reset
clears the H3F:H1F bits.
HALF-BRIDGE CONTROL
general enable of the circuitry is done by setting PSON in the
System Control Register (SYSCTL). HBx_L and HBx_H form
one half-bridge. It is not possible to switch on both MOSFETs
in one half-bridge at the same time. If both bits are set, the
high-side MOSFET has a higher priority.
Hall-Effect Sensor Input Pin Flag Bits (H3F:H1F)
Analog Integrated Circuit Device Data
Freescale Semiconductor
Reset
Write
Read
Bits
These read-only flag bits reflect the input Hx while the Hall-
• 1 = Hall-effect sensor input pin current above threshold
Each output MOSFET can be controlled individually. The
Register Name and Address: HASTAT - $09
7
0
0
6
0
0
Control
5
0
0
4
0
0
3
0
0
Figure 17. Half-Bridge Push-Pull Output Driver
Current
On/Off
On/Off
Status
BEMF
Status
Limit
H3F
2
0
H2F
1
0
Overtemperature Protection,
Overcurrent Protection
Overcurrent Protection
High-Side Driver
Low-Side Driver
H1F
Current Limitation,
Current Recopy,
0
0
Charge Pump,
HALF-BRIDGES
output stages. The half-bridges can be used in H-Bridge,
high-side, or low-side configurations.
(HBOUT) owing to the fact that all half-bridge outputs are
switched off.
half-bridge being on at the same time, a break-before-make
circuit exists. Switching the high-side MOSFET on is inhibited
as long as the potential between gate and V
certain threshold. Switching the low-side MOSFET on is
blocked as long as the potential between gate and source of
the high-side MOSFET did not fall below a certain threshold.
• 0 = Hall-effect sensor input pin current below threshold
Outputs HB1:HB4 provide four low-resistive half-bridge
Reset clears all bits in the H-Bridge Output Register
HB1:HB4 output features:
• Short circuit (overcurrent) protection on high-side and
• Current recopy feature (low side MOSFET)
• Overtemperature protection
• Overvoltage and undervoltage protection
• Current limitation feature (low side MOSFET)
To avoid both MOSFETs (high side and low side) of one
low-side MOSFETs
LOGIC COMMANDS AND REGISTERS
FUNCTIONAL DEVICE OPERATION
VSUP
GND
SS
is not below a
908E625
HBx
31