C8051T605-GSR Silicon Laboratories Inc, C8051T605-GSR Datasheet - Page 35

• Manufacturer Part Number: C8051T605-GSR
• Description: MCU 8-Bit C8051T60x 8051 CISC 2KB EPROM 1.8V/3V 14-Pin SOIC T/R
• Manufacturer: Silicon Laboratories Inc

Specifications of C8051T605-GSR

• Package: 14SOIC
• Device Core: 8051
• Family Name: C8051T60x
• Maximum Speed: 25 MHz
• Ram Size: 256 Byte
• Program Memory Size: 2 KB
• Operating Supply Voltage: 1.8|3 V
• Data Bus Width: 8 Bit
• Program Memory Type: EPROM
• Number Of Programmable I/os: 8
• Interface Type: I2C/SMBus/UART
• Operating Temperature: -40 to 85 °C
• Number Of Timers: 3

Table 8.7. Internal High-Frequency Oscillator Electrical Characteristics
V
Table 8.8. Temperature Sensor Electrical Characteristics
V
Table 8.9. Voltage Reference Electrical Characteristics
V
Parameter
Linearity
Slope
Slope Error*
Offset
Offset Error*
Note: Represents one standard deviation from the mean.
Parameter
Input Voltage Range
Input Current
Parameter
Oscillator Frequency
Oscillator Supply Current 
(from V
Power Supply Variance
Temperature Variance
DD
DD
DD
= 1.8 to 3.6 V; T
= 3.0 V, –40 to +85 °C unless otherwise specified.
= 3.0 V; –40 to +85 °C unless otherwise specified.
DD
)
A
= –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.
Sample Rate = 500 ksps; VREF = 2.5 V
IFCN = 11b
25 °C, V
OSCICN.2 = 1
Constant Temperature
Constant Supply
Temp = 0 °C
Temp = 0 °C
Conditions
DD
Conditions
= 3.0 V,
Conditions
Rev. 1.2
C8051T600/1/2/3/4/5/6
Min
24
—
—
—
Min
—
—
—
—
—
Min
—
±0.02
0
24.5
Typ
450
±20
±0.5
Typ
±80
903
±10
3.2
Typ
12
—
Max
700
25
—
—
Max
—
—
—
—
—
Max
V
—
DD
ppm/°C
mV/°C
Units
µV/°C
Units
MHz
%/V
µA
mV
mV
Units
°C
µA
V
35