ATxmega256A3BU Atmel Corporation, ATxmega256A3BU Datasheet - Page 447

• Manufacturer Part Number: ATxmega256A3BU
• Manufacturer: Atmel Corporation

Specifications of ATxmega256A3BU

• Flash (kbytes): 256 Kbytes
• Pin Count: 64
• Max. Operating Frequency: 32 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 16
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 47
• Ext Interrupts: 49
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 8
• Twi (i2c): 2
• Uart: 6
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 16
• Adc Resolution (bits): 12
• Adc Speed (ksps): 2000
• Analog Comparators: 4
• Resistive Touch Screen: No
• Dac Channels: 2
• Dac Resolution (bits): 12
• Temp. Sensor: Yes
• Crypto Engine: AES/DES
• Sram (kbytes): 16
• Eeprom (bytes): 4096
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.6 to 3.6
• Operating Voltage (vcc): 1.6 to 3.6
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 7
• Output Compare Channels: 22
• Input Capture Channels: 22
• Pwm Channels: 22
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

33.12.3.6
33.12.3.7
33.12.3.8
33.12.3.9
33.12.3.10
8331A–AVR–07/11
Write Page
Erase & Write Page
Erase Application/ Boot Loader/ EEPROM Section
Application / Boot Section CRC
Flash CRC
The Write Application Section Page, Write Boot Loader Section Page, Write User Signature Row
and Write EEPROM Page is used to write a loaded Flash/EEPROM page buffer into the
selected memory space
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Erase & Write Application Section Page, Erase & Write Boot Loader Section Page, and
Erase & Write EEPROM Page is used to erase one page and then write a loaded
Flash/EEPROM page buffer into that page in the selected memory space, in one atomic
operation.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Erase Application Section, Erase Boot Loader Section and Erase EEPROM Section com-
mand is used to erase the complete selected section.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The Application Section CRC and Boot Loader Section CRC commands can be used to verify
the content of the selected section after programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished. The CRC
checksum will be available in the NVM DATA register.
The Flash CRC command can be used to verify the content of the Flash Program Memory after
programming. The command can be executed independently of the lock bit state.
Once this operation starts the PDIBUS between the PDI Controller and the NVM is disabled, and
the NVMEN bit in the PDI STATUS register is cleared until the operation is finished. Poll the
NVMEN bit until this is set again, indicting the PDIBUS is enabled.
1. Load the NVM CMD register with Write Application Section/Boot Loader Section/User
2. Write the selected page by doing a PDI Write. The page is written by addressing any
1. Load the NVM CMD register with Erase & Write Application Section/Boot Loader Sec-
2. Write the selected page by doing a PDI Write. The page is written by addressing any
1. Load the NVM CMD register with Erase Application/ Boot/ EEPROM Section command
2. Set the CMDEX bit in the NVM CTRLA register.
1. Load the NVM CMD register with Application/ Boot Loader Section CRC command
2. Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
1. Load the NVM CMD register with Flash CRC command.
2. Set the CMDEX bit in the NVM CTRLA register.
Signature Row/EEPROM Page command.
byte location within the page.
tion/User Signature Row/EEPROM Page command.
byte location within the page.
during self-programming.
Atmel AVR XMEGA AU
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