MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 21

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
TAP AC Test Conditions
Table 14: TAP DC Electrical Characteristics and Operating Conditions
Note 2; 0°C £ T
NOTE:
1. All voltages referenced to V
2. This table defines DC values for TAP control and data balls only. The DQ SRAM balls used in JTAG operation will have
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
Input pulse levels........................................V
Input rise and fall times ......................................... 1ns
Input timing reference levels............................... 0.9V
Output reference levels ........................................ 0.9V
Test load termination supply voltage ................. 0.9V
the DC values as defined in Table 7, “DC Electrical Characteristics and Operating Conditions,” on page 11.
DD
, HSTL, QDRb4 SRAM
A
£ +70°C; V
DD
= 2.5V ±0.1V unless otherwise noted
SS
(GND).
Output(s) disabled,
0V £ V
0V £ V
CONDITIONS
I
I
OHC
I
OLC
I
OHT
OLT
= -100µA
SS
= 100µA
= -2mA
= 2mA
IN
IN
to 1.8V
£ V
£ V
DD
DD
21
SYMBOL
V
V
V
V
V
IL
V
IL
OH
OH
OL
OL
2.5V V
IH
IL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
O
TAP AC Output Load Equivalent
I
1
2
1
1
TDO
MIN
-0.3
-5.0
-5.0
DD
1.7
2.1
1.7
1 MEG x 18, 512K x 36
, HSTL, QDRb4 SRAM
Figure 10:
Z = 50Ω
O
V
DD
MAX
0.7
5.0
5.0
0.2
0.4
+ 0.3
0.9V
UNITS
50Ω
µA
µA
©2003 Micron Technology, Inc.
V
V
V
V
V
V
20pF
NOTES
1, 2
1, 2
1, 2
1, 2
1, 2
1, 2
2
2