MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 5

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1. Consult Micron Technical Notes for more thorough discussions of clocking schemes.
2. Data capture is possible using only one of the two signals. CQ and CQ# clocks are optional use outputs.
3. For high frequency applications (200 MHz and faster) the CQ and CQ# clocks (for data capture) are recommended
MASTER
ASIC)
over the C and C# clocks (for data alignment). The C and C# clocks are optional use inputs.
(CPU
BUS
or
DD
, HSTL, QDRb4 SRAM
SRAM 1 Input CQ#
SRAM 2 Input CQ#
SRAM 1 Input CQ
SRAM 2 Input CQ
Delayed K#
DATA OUT
Delayed K
Source K#
DATA IN
Source K
Address
Write#
Read#
BW#
Vt
R
R
R = 50Ω
D
SA
Figure 3: Application Example
Vt = V
R
#
W
#
SRAM 1
REF
W
B
#
C C#
K
CQ#
5
CQ
ZQ
K#
Q
R = 250Ω
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
1 MEG x 18, 512K x 36
, HSTL, QDRb4 SRAM
D
SA
R
Vt
Vt
R
#
W
#
SRAM 2
W
B
#
C C#
©2003 Micron Technology, Inc.
K
CQ#
CQ
ZQ
K#
Q
R = 250Ω