MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 9

• Manufacturer Part Number: MT54V1MH18E
• Description: 18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1. The address is concatenated with two additional internal LSBs to facilitate BURST operation. The address order is
2. State transitions: RD = (R# = LOW); WT = (W# = LOW).
3. Read and write state machines can be simultaneously active. Read and write cannot be simultaneously initiated;
4. State machine, control timing sequence is controlled by K.
always fixed as: xxx...xxx+0, xxx...xxx+1, xxx...xxx+2, xxx...xxx+3. Bus cycle is terminated at the end of this sequence
(burst count = 4).
read takes precendence.
WRITE ADDRESS;
READ ADDRESS;
LOAD NEW
LOAD NEW
W_Count=0
R_Count=0;
R_Init=1
DD
, HSTL, QDRb4 SRAM
RD & R_Count=4
WT & W_Count=4
always
always
W_Count=W_Count+2
R_Count=R_Count+2
WRITE DOUBLE;
READ DOUBLE;
Bus Cycle State Diagram
Figure 4:
R_Count=2
W_Count=2
always
always
9
RD
WT & R_Init=0
/WT & W_Count=4
/RD & R_Count=4
ADDRESS BY TWO 1
ADDRESS BY TWO 1
INCREMENT WRITE
INCREMENT READ
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
R_Init=0
DD
1 MEG x 18, 512K x 36
, HSTL, QDRb4 SRAM
WRITE PORT NOP
READ PORT NOP
POWER-UP
R_Init=0
©2003 Micron Technology, Inc.
provided
provided
voltage
voltage
Supply
Supply
/RD
/WT