MT54V1MH18E Micron Semiconductor Products, Inc., MT54V1MH18E Datasheet - Page 24

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MT54V1MH18E

Manufacturer Part Number
MT54V1MH18E
Description
18Mb QDR SRAM, 2.5V Vdd, Hstl, 4-Word Burst,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT54V1MH18EF-6 ES
Manufacturer:
MICRON/镁光
Quantity:
20 000
NOTE:
Data Sheet Designation
supply and temperature range for production devices. Although considered final, these specifications are sub-
ject to change, as further product development and data characterization sometimes occur.
18Mb: 2.5V V
MT54V1MH18E_16_F.fm – Rev. F, Pub. 3/03
1. All dimensions are in millimeters.
2. Molding dimensions do not include protrusion; allowable mold protrusion is 0.25mm per side.
SOLDER BALL DIAMETER REFERS
TO POST REFLOW CONDITION. THE
PRE-REFLOW DIAMETER IS Ø 0.40
No Marking: This data sheet contains minimum and maximum limits specified over the complete power
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and Micron Technology, Inc.,
DD
, HSTL, QDRb4 SRAM
15.00 ±0.10
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
165X Ø 0.45
BALL A11
7.50 ±0.05
7.00 ±0.05
Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
0.85 ±0.075
5.00 ±0.05
13.00 ±0.10
10.00
6.50 ±0.05
1.00
TYP
165-Ball FBGA
NEC, and Samsung.
Figure 11:
C
1.00
TYP
24
BALL A1
PIN A1 ID
14.00
SEATING PLANE
®
0.12 C
2.5V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.20 MAX
DD
1 MEG x 18, 512K x 36
, HSTL, QDRb4 SRAM
MOLD COMPOUND: EPOXY NOVOLAC
SUBSTRATE: PLASTIC LAMINATE
SOLDER BALL MATERIAL: EUTECTIC 63% Sn, 37% Pb
SOLDER BALL PAD: Ø .33mm
PIN A1 ID
©2003 Micron Technology, Inc.

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