N25Q128A13BF840F NUMONYX, N25Q128A13BF840F Datasheet - Page 106

• Manufacturer Part Number: N25Q128A13BF840F
• Description: IC SRL FLASH 128MB NMX 8-VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of N25Q128A13BF840F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Instructions
9.3
106/157
Figure 71. Reset Enable and Reset Memory Instruction Sequence, Dual I/O
QIO-SPI Instructions
In QIO-SPI protocol, instructions, addresses and Input/Output data always run in parallel on
four wires: DQ0, DQ1, DQ2 and DQ3 with the already mentioned exception of the modify
instruction (erase and program) performed with the VPP=VPPh.
In the case of a Quad Command Fast Read (QCFR), Read OTP (ROTP), Read Lock
Registers (RDLR), Read Status Register (RDSR), Read Flag Status Register (RFSR), Read
NV Configuration Register (RDNVCR), Read Volatile Configuration Register (RDVCR),
Read Volatile Enhanced Configuration Register (RDVECR) and Multiple Read I/O
Identification (MIORDID) instruction, the shifted-in instruction sequence is followed by a
data-out sequence. Chip Select (S) can be driven High after any bit of the data-out
sequence is being shifted out.
In the case of a Quad Command Page Program (QCPP), Program OTP (POTP), Subsector
Erase (SSE), Sector Erase (SE), Bulk Erase (BE), Program/Erase Suspend (PES),
Program/Erase Resume (PER), Write Status Register (WRSR), Clear Flag Status Register
(CLFSR), Write to Lock Register (WRLR), Write Volatile Configuration Register (WRVCR),
Write Volatile Enhanced Configuration Register (WRVECR), Write NV Configuration
Register (WRNVCR), Write Enable (WREN) or Write Disable (WRDI) instruction, Chip
Select (S) must be driven High exactly at a byte boundary, otherwise the instruction is
rejected, and is not executed.
All attempts to access the memory array during a Write Status Register cycle, a Write Non
Volatile Configuration Register, a Program cycle or an Erase cycle are ignored, and the
internal Write Status Register cycle, Write Non Volatile Configuration Register, Program
cycle or Erase cycle continues unaffected, the only exception is the Program/Erase
Suspend instruction (PES), that can be used to pause all the program and the erase cycles
but the Program OTP (POT), Write Status Register (WRSR), Bulk Erase (BE), and Write
Non Volatile Configuration Register. The suspended program or erase cycle can be
resumed by mean of the Program/Erase Resume instruction (PER). During the
program/erase cycles also the polling instructions (to check if the internal modify cycle is
finished by mean of the WIP bit of the Status Register or of the Program/Erase controller bit
of the Flag Status register) are also accepted to allow the application checking the end of
the internal modify cycles, of course these polling instructions don't affect the internal cycles
performing.
DQ0
DQ1
S#
C
0
reset enable
1
2
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0
reset memory
1
2
©2010 Micron Technology, Inc. All rights reserved.
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N25Q128 - 3 V