N25Q128A13BF840F NUMONYX, N25Q128A13BF840F Datasheet - Page 99

• Manufacturer Part Number: N25Q128A13BF840F
• Description: IC SRL FLASH 128MB NMX 8-VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of N25Q128A13BF840F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N25Q128 - 3 V
9.2.13
9.2.14
9.2.15
Program/Erase Resume
After a Program/Erase suspend instruction, a Program/Erase Resume instruction is
required to continue performing the suspended Program or Erase sequence.
Except for the parallelizing of the instruction code on the two pins DQ0 and DQ1, the
instruction functionality is exactly the same as the Program/Erase Resume (PER)
instruction of the Extended SPI protocol.
Figure 58. Program/Erase Resume instruction sequence DIO-SPI
Read Status Register (RDSR)
The Read Status Register (RDSR) instruction allows the Status Register to be read. Except
for the parallelizing of the instruction code and the output data on the two pins DQ0 and
DQ1, the instruction functionality is exactly the same as the Read Status Register (RDSR)
instruction of the Extended SPI protocol.
Figure 59. Read Status Register instruction sequence DIO-SPI
Write status register (WRSR)
The write status register (WRSR) instruction allows new values to be written to the status
register. Before it can be accepted, a write enable (WREN) instruction must previously have
been executed. Except for the parallelizing of the instruction code and the input data on the
two pins DQ0 and DQ1, the instruction functionality and the protection feature management
DQ0
DQ1
C
S
S
C
DQ0
DQ1
0
Instruction
1
2
3
0
Instruction
7
6
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
5
4
5
Byte
2
Status Register Out
3
2
3
6
1
0
7
7
6
8
5
4
9 10 11
Byte
3
2
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1
0
Instructions
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