MC908GR48ACFAE Freescale Semiconductor, MC908GR48ACFAE Datasheet - Page 46
![IC MCU 48K FLASH 8MHZ 48-LQFP](/photos/12/27/122793/mc908gr48acfae_sml.jpg)
MC908GR48ACFAE
Manufacturer Part Number
MC908GR48ACFAE
Description
IC MCU 48K FLASH 8MHZ 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908GR32ACFJE.pdf
(314 pages)
Specifications of MC908GR48ACFAE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
37
Program Memory Size
48KB (48K x 8)
Program Memory Type
FLASH
Ram Size
1.5K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
HC08GR
Core
HC08
Data Bus Width
8 bit
Data Ram Size
1.5 KB
Interface Type
ESCI/SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
53
Number Of Timers
8
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908GZ60E, M68CBL05CE, M68EML08GPGTE
Minimum Operating Temperature
- 40 C
On-chip Adc
24-ch x 10-bit
Controller Family/series
HC08
No. Of I/o's
37
Ram Memory Size
1.5KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
SCI, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908GR48ACFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Memory
2.6.5 FLASH-1 Page Erase Operation
Use this step-by-step procedure to erase a page (128 bytes) of FLASH-1 memory:
A. Programming and erasing of FLASH locations can not be performed by code being executed from the
B. While these operations must be performed in the order shown, other unrelated operations may occur
C. It is highly recommended that interrupts be disabled during program/erase operations.
In applications that require more than 1000 program/erase cycles, use the 4 ms page erase specification
to get improved long-term reliability. Any application can use this 4 ms page erase specification. However,
in applications where a FLASH location will be erased and reprogrammed less than 1000 times, and
speed is important, use the 1 ms page erase specification to get a shorter cycle time.
46
10. Wait for a time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH-1 control register (FL1CR).
2. Read the FLASH-1 block protect register (FL1BPR).
3. Write any data to any FLASH-1 address within the address range of the page (128 byte block) to
4. Wait for time, t
5. Set the HVEN bit.
6. Wait for time, t
7. Clear the ERASE bit.
8. Wait for time, t
9. Clear the HVEN bit.
same FLASH array.
between the steps. However, care must be taken to ensure that these operations do not access any
address within the FLASH array memory space such as the COP control register (COPCTL) at
$FFFF.
be erased.
MC68HC908GR60A • MC68HC908GR48A • MC68HC908GR32A Data Sheet, Rev. 5
NVS
ERASE
NVH
RCV
(minimum 10 μs).
(minimum 5 μs).
, (typically 1 μs) after which the memory can be accessed in normal read mode.
(minimum 1 ms or 4 ms).
NOTE
Freescale Semiconductor
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