MC9S12DP512CPVER Freescale Semiconductor, MC9S12DP512CPVER Datasheet - Page 99

IC MCU 16BIT 4K FLASH 112-LQFP

MC9S12DP512CPVER

Manufacturer Part Number
MC9S12DP512CPVER
Description
IC MCU 16BIT 4K FLASH 112-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12DP512CPVER

Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
CAN, I²C, SCI, SPI
Peripherals
PWM, WDT
Number Of I /o
91
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
12K x 8
Voltage - Supply (vcc/vdd)
2.35 V ~ 5.25 V
Data Converters
A/D 16x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Package
112LQFP
Family Name
HCS12
Maximum Speed
25 MHz
Operating Supply Voltage
2.5|5 V
Data Bus Width
16 Bit
Interface Type
CAN/I2C/SCI/SPI
On-chip Adc
2(8-chx10-bit)
Number Of Timers
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MC9S12DP512CPVERTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC9S12DP512CPVER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
A.3 NVM, Flash and EEPROM
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency f
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as f
The minimum program and erase times shown in Table A-11 are calculated for maximum f
maximum f
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f
A.3.1.2 Row Programming
This applies only to the Flash where up to 64 words in a row can be programmed consecutively by keeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 1024 byte Flash sector or a 4 byte EEPROM sector takes:
NOTE:
bus
. The maximum times are calculated for minimum f
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
NVMOP
NVMOSC
and can be calculated according to the following formula.
NVMOP
is required for performing program or erase operations. The NVM modules
.
t
t
swpgm
t
bwpgm
brpgm
t
era
=
=
=
9
t
4
swpgm
4000
---------------------
f
NVMOP
---------------------
f
NVMOP
1
1
+
---------------------
f
NVMOP
63 t
1
+
+
25
9
bwpgm
NVMOP
----------
f
----------
f
bus
bus
1
MC9S12DP512 Device Guide V01.25
1
and a f
bus
of 2MHz.
NVMOP
and
99

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