R4F24569NVFQV Renesas Electronics America, R4F24569NVFQV Datasheet - Page 236

• Manufacturer Part Number: R4F24569NVFQV
• Description: MCU 256KB FLASH 64K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24569NVFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 32MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART, USB
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.5.5
The read strobe (RD) timing can be changed for individual areas by setting bits RDN7 to RDN0 to
1 in RDNCR. Figure 6.19 shows an example of the timing when the read strobe timing is changed
in basic bus 3-state access space.
When the DMAC or EXDMAC is used in single address mode, note that if the RD timing is
changed by setting RDNn to 1, the RD timing will change relative to the rise of DACK or
EDACK.
Page 206 of 1392
Read
Write
Notes: 1. Downward arrows indicate the timing of WAIT pin sampling.
Read Strobe (RD) Timing
2. When RDNn = 0
φ
WAIT
Address bus
AS
RD
Data bus
HWR, LWR
Data bus
Figure 6.18 Example of Wait State Insertion Timing
T
1
By program wait
T
2
T
w
Write data
By WAIT pin
T
w
H8S/2456, H8S/2456R, H8S/2454 Group
T
REJ09B0467-0350 Rev. 3.50
w
Read data
T
3
Jul 07, 2010