DF3048BVX25WV Renesas Electronics America, DF3048BVX25WV Datasheet - Page 895

MCU 3/5V 128K PB-FREE 100-TQFP

DF3048BVX25WV

Manufacturer Part Number
DF3048BVX25WV
Description
MCU 3/5V 128K PB-FREE 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheets

Specifications of DF3048BVX25WV

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, PWM, WDT
Number Of I /o
70
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF3048BVX25WV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Reset in T3 State
Figure D.3 is a timing diagram for the case in which RES goes low during the T3 state of an
external memory access cycle. As soon as RES goes low, all ports are initialized to the input state.
AS, RD, HWR, and LWR go high, and the data bus goes to the high-impedance state. The address
bus outputs are held during the T3 state.The same timing applies when a reset occurs in the T2
state of an access cycle to a two-state-access area.
RES
Internal
reset signal
Address bus
CS
CS
AS
RD (read access)
HWR, LWR
(write access)
Data bus
(write access)
I/O port
0
7
to CS
Figure D.3 Reset during Memory Access (Reset during T3 State)
1
Access to external address
T1
T2
Rev. 3.00 Sep 27, 2006 page 867 of 872
T3
Appendix D Pin States
High-impedance
High-impedance
High-impedance
H'000000
REJ09B0325-0300

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