DF3052BX25V Renesas Electronics America, DF3052BX25V Datasheet - Page 8

• Manufacturer Part Number: DF3052BX25V
• Description: MCU 5V 512K 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3052BX25V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

H8
■
• Renesas, the world’s #1
• Wide range of sizes of
• Fastest flash write time:
• Access as fast as
• Up to -40°C to +125°C range
• Multiple user-friendly modes for
• User mode allows flash to be
supplier of flash, has
shipped over 1 Billion
flash MCUs
highly reliable F-ZTAT
(flash) up to 1MB,
in 0.18µm process
2.5 sec./ 128KB for
0.18µm process
10ns @ 100MHz
programming/reprogramming
flash memory
programmed or erased by user
application software
Renesas: The #1
Flash MCU supplier
Powerful Data Path
Management
H8 products are fully optimized system
solutions, so besides powerful CPU core
processing, H8 MCUs have advanced
data path management.
There are three types of data movement
engines: System DMA, External DMA
and Data Transfer Controller. The
Advanced
manages complex data and control
across the multiple-bus architecture.
The H8S and H8SX MCU architectures
use 3 separate buses. Data movement on
the External Bus and System Bus can
operate in parallel, greatly increasing
system performance by optimizing
operation per clock cycle.
®
Family of Microcontrollers
Bus
System
Controller
Memory Structure
Stacked-type
(NOR) Flash HND
MONOS-type
FLASH
(MONOS = Metal
Oxide Nitride
Oxide Silicon)
Next-Generation
Non-volatile
Memory
- MRAM
- PRAM
80MHz
MONOS
TOP REASONS TO SELECT H8
• Boot mode allows in-system
• USB devices can be optionally
• User Boot mode allows storing
programming using RS-232
serial port
programmed via the USB port
a custom flash update routine
in a special protected area
(0.2- 0.18µm)
50MHz
2004
Serial Transfers using DMA only
Parallel Transfers using DMA + EXDMA
MONOS
(180 nm)
A1
A1
Flash
ROM
INTC
80MHz
2005
100MHz
80MHz
B1
B1
A2
80MHz
2006
(150 nm)
“A” Transfers
(150 nm)
transferring data between an external device and the MCU
(yellow). This parallel operation reduces time for operation.
Bus Bridge
MONOS
H8S CPU
I/O Ports
A3
B2
A2
This example shows system operation (red) using the
2007
Peripheral Bus
(130 nm)
100MHz
System DMA, while in parallel the External DMA is
B2
Time Saved
2008
(90nm)
RAM
DMA
(4ch)
A3
2009
133MHz
• Write mode enables MCU
• Flash can be programmed via
Internal Bus
programming with desktop
or production programmers
the on-chip debug emulator
MRAM
Parallel operation made possible
by using DMA + EXDMA allows
more data transfers in a given
length of time for increased
system throughput
2010
All Flash memory accesses are
need for pre-fetch operations.
(Full Speed)
single cycle, eliminating the
EXDMA
(65nm)
DTC
BSC
2011
166MHz
2012
“B” Transfers
2013
(45nm)
2014
6