HD64F3337YCP16V Renesas Electronics America, HD64F3337YCP16V Datasheet - Page 456

• Manufacturer Part Number: HD64F3337YCP16V
• Description: MCU 3/5V 60K PB-FREE 84-PLCC
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300r

Specifications of HD64F3337YCP16V

• Core Size: 8-Bit
• Program Memory Size: 60KB (60K x 8)
• Oscillator Type: Internal
• Core Processor: H8/300
• Speed: 16MHz
• Connectivity: Host Interface, I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 74
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 84-PLCC
• No. Of I/o's: 74
• Ram Memory Size: 1KB
• Cpu Speed: 16MHz
• No. Of Timers: 6
• No. Of Pwm Channels: 2
• Digital Ic Case Style: PLCC
• Controller Family/series: H8/300
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

19.7
Read these precautions before using writer mode, on-board programming mode, or flash memory
emulation by RAM.
(1) Program with the specified voltages and timing.
The rated programming voltage (V
If the PROM programmer is set to Hitachi HN28F101 specifications, V
voltages in excess of the rating can permanently damage the device. Take particular care to ensure
that the PROM programmer peak overshoot does not exceed the rated limit of 13 V.
(2) Before programming, check that the chip is correctly mounted in the PROM
programmer. Overcurrent damage to the device can result if the index marks on the PROM
programmer socket, socket adapter, and chip are not correctly aligned.
(3) Don’t touch the socket adapter or chip while programming. Touching either of these can
cause contact faults and write errors.
426
V
V
Note: Erase-verify data output values may be intermediate between 1 and 0 before erasing has been completed.
Address
CE
OE
WE
I/O0 to I/O7
CC
PP
5.0 V
12 V
5.0 V
Flash Memory Programming and Erasing Precautions
t
t
CES
VPS
t
OEWS
t
t
WEP
DS
Command
input
t
CEH
t
Erase setup
DH
t
CWC
t
WEH
Figure 19.19 Erase Timing
PP
t
CES
) of the flash memory is 12.0 V.
t
WEP
Command
t
t
DS
CEH
input
t
DH
Erase
t
ET
t
CES
t
Valid address
AS
Command
t
t
WEP
DS
input
t
AH
t
DH
t
CEH
PP
t
OERS
Erase-verify
will be 12.0 V. Applying
t
VA
Valid data
output
t
VPH
t
DF