DF2166VTE33 Renesas Electronics America, DF2166VTE33 Datasheet - Page 470

MCU FLASH 3V 512K 33MHZ 144TQFP

DF2166VTE33

Manufacturer Part Number
DF2166VTE33
Description
MCU FLASH 3V 512K 33MHZ 144TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2166VTE33

Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, LPC, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
106
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
14.11
The cyclic redundancy check (CRC) operation circuit detects errors in data blocks.
14.11.1 Features
The features of the CRC operation circuit are listed below.
• CRC code generated for any desired data length in an 8-bit unit
• CRC operation executed on eight bits in parallel
• One of three generating polynomials selectable
• CRC code generation for LSB-first or MSB-first communication selectable
Figure 14.45 shows a block diagram of the CRC operation circuit.
14.11.2 Register Descriptions
The CRC operation circuit has the following registers.
• CRC control register (CRCCR)
• CRC data input register (CRCDIR)
• CRC data output register (CRCDOR)
Rev. 3.00, 03/04, page 428 of 830
CRC Operation Circuit
Figure 14.45 Block Diagram of CRC Operation Circuit
[Legend]
CRCCR:
CRCDIR:
CRCDOR:
CRCDOR
CRCDIR
CRCCR
CRC control register
CRC data input register
CRC data output register
Control
signal
CRC code
generation
circuit

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