DF2166VTE33 Renesas Electronics America, DF2166VTE33 Datasheet - Page 866
![MCU FLASH 3V 512K 33MHZ 144TQFP](/photos/28/61/286114/144-tqfp_sml.jpg)
DF2166VTE33
Manufacturer Part Number
DF2166VTE33
Description
MCU FLASH 3V 512K 33MHZ 144TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.HS2168EPI61H-U.pdf
(876 pages)
Specifications of DF2166VTE33
Core Processor
H8S/2000
Core Size
16-Bit
Speed
33MHz
Connectivity
I²C, IrDA, LPC, SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
106
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
40K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Rev. 3.00, 03/04, page 824 of 830
Item
Table 25.2 DC
Characteristics (2)
25.3 AC Characteristics
25.3.3 Bus Timing
Table 25.8 Bus Timing
25.3.4 Multiplex Bus
Timing
Table 25.9 Multiplex Bus
Timing
25.6 Flash Memory
Characteristics
Table 25.16 Flash
Memory Characteristics
Page
785
794,
800
813 to
815
Revisions (See Manual for Details)
Description amended.
Description amended.
Description amended and added.
Ta = 0°C to +75°C (operating temperature range for
programming/erasing in regular specifications)
Ta = 0°C to +85°C (operating temperature range for
programming/erasing in wide-range specifications)
Notes: 5. Reprogramming count in each erase block.
Item
Current
consumption
*
Item
Write data hold time
Item
Reprogramming
count*
5
5
Normal
operation
Sleep
mode
Standby
mode*
Symbol Min.
N
WEC
6
Symbol
I
Symbol
t
CC
WDH
100*
3
Typ. Max. Unit
1000
Min.
Min.
0.5 × t
cyc
Typ.
43
30
38
– 5
Times
Max.
55
40
90
120
Max.
Test
Conditions
Unit
ns
Unit
mA
µA
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