SAF-XC886CLM-8FFI 5V AC Infineon Technologies, SAF-XC886CLM-8FFI 5V AC Datasheet - Page 59

• Manufacturer Part Number: SAF-XC886CLM-8FFI 5V AC
• Description: IC MCU 8BIT FLASH TQFP-48
• Manufacturer: Infineon Technologies
• Series: XC8xxr

Specifications of SAF-XC886CLM-8FFI 5V AC

• Program Memory Type: FLASH
• Program Memory Size: 32KB (32K x 8)
• Package / Case: 48-TFQFP
• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 103.2MHz
• Connectivity: CAN, LIN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 34
• Ram Size: 1.75K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Data Bus Width: 8 bit
• Data Ram Size: 1.75 KB
• Interface Type: JTAG/SPI/SSC/UART
• Maximum Clock Frequency: 24 MHz
• Number Of Programmable I/os: 48
• Number Of Timers: 4
• Operating Supply Voltage: 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: MCBXC88X - BOARD EVAL FOR INFINEON XC88X
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FX886CLM8FFI5VACXT; SAF-XC886CLM-8FFI AB; SAF-XC886CLM-8FFI AB; SAFXC886CLM8FFIABT; SP000217341

3.3
The Flash memory provides an embedded user-programmable non-volatile memory,
allowing fast and reliable storage of user code and data. It is operated from a single 2.5 V
supply from the Embedded Voltage Regulator (EVR) and does not require additional
programming or erasing voltage. The sectorization of the Flash memory allows each
sector to be erased independently.
Features
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1) P-Flash: 64-byte wordline can only be programmed once, i.e., one gate disturb allowed.
2) Values shown here are typical values.
3) Values shown here are typical values.
Data Sheet
D-Flash: 32-byte wordline can be programmed twice, i.e., two gate disturbs allowed.
frequency range for Flash read access.
programming and erasing.
In-System Programming (ISP) via UART
In-Application Programming (IAP)
Error Correction Code (ECC) for dynamic correction of single-bit errors
Background program and erase operations for CPU load minimization
Support for aborting erase operation
Minimum program width
1-sector minimum erase width
1-byte read access
Flash is delivered in erased state (read all zeros)
Operating supply voltage: 2.5 V ± 7.5 %
Read access time: 3 ×
Program time: 248256 /
Erase time: 9807360 /
Flash Memory
f
sysmin
f
t
SYS
CCLK
1)
f
SYS
is used for obtaining the worst case timing.
of 32-byte for D-Flash and 64-byte for P-Flash
= 102 ms
= 125 ns
= 2.6 ms
f
sys
f
sys
= 96 MHz ± 7.5% (
= 96 MHz ± 7.5% is the only frequency range for Flash
3)
2)
3)
52
f
CCLK
= 24 MHz ± 7.5 %) is the maximum
Functional Description
XC886/888CLM
V1.2, 2009-07