SAF-XC886CLM-8FFI 5V AC Infineon Technologies, SAF-XC886CLM-8FFI 5V AC Datasheet - Page 61

• Manufacturer Part Number: SAF-XC886CLM-8FFI 5V AC
• Description: IC MCU 8BIT FLASH TQFP-48
• Manufacturer: Infineon Technologies
• Series: XC8xxr

Specifications of SAF-XC886CLM-8FFI 5V AC

• Program Memory Type: FLASH
• Program Memory Size: 32KB (32K x 8)
• Package / Case: 48-TFQFP
• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 103.2MHz
• Connectivity: CAN, LIN, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 34
• Ram Size: 1.75K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Data Bus Width: 8 bit
• Data Ram Size: 1.75 KB
• Interface Type: JTAG/SPI/SSC/UART
• Maximum Clock Frequency: 24 MHz
• Number Of Programmable I/os: 48
• Number Of Timers: 4
• Operating Supply Voltage: 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• For Use With: MCBXC88X - BOARD EVAL FOR INFINEON XC88X
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FX886CLM8FFI5VACXT; SAF-XC886CLM-8FFI AB; SAF-XC886CLM-8FFI AB; SAFXC886CLM8FFIABT; SP000217341

Figure 11
The internal structure of each Flash bank represents a sector architecture for flexible
erase capability. The minimum erase width is always a complete sector, and sectors can
be erased separately or in parallel. Contrary to standard EPROMs, erased Flash
memory cells contain 0s.
The D-Flash bank is divided into more physical sectors for extended erasing and
reprogramming capability; even numbers for each sector size are provided to allow
greater flexibility and the ability to adapt to a wide range of application requirements.
3.3.2
To enhance system performance, the P-Flash banks are configured for parallel read to
allow two bytes of linear code to be read in 4 x CCLK cycles, compared to 6 x CCLK
cycles if serial read is performed. This is achieved by reading two bytes in parallel from
a P-Flash bank pair within the 3 x CCLK cycles access time and storing them in a cache.
Subsequent read from the cache by the CPU does not require a wait state and can be
completed within 1 x CCLK cycle. The result is the average instruction fetch time from
the P-Flash banks is reduced and thus, the MIPS (Mega Instruction Per Second) of the
system is increased.
However, if the parallel read feature is not desired due to certain timing constraints, it can
be disabled by calling the parallel read disable subroutine.
Data Sheet
Parallel Read Access of P-Flash
Sector 0: 3.75-Kbyte
Flash Bank Sectorization
Sector 2: 128-byte
Sector 1: 128-byte
P-Flash
54
Sector 3: 512-byte
Sector 9: 128-byte
Sector 8: 128-byte
Sector 7: 128-byte
Sector 6: 128-byte
Sector 5: 256-byte
Sector 4: 256-byte
Sector 2: 512-byte
Sector 1: 1-Kbyte
Sector 0: 1-Kbyte
D-Flash
Functional Description
XC886/888CLM
V1.2, 2009-07