GA200TS60U Vishay, GA200TS60U Datasheet - Page 7

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GA200TS60U

Manufacturer Part Number
GA200TS60U
Description
IGBT FAST 600V 200A INT-A-PAK
Manufacturer
Vishay
Datasheets

Specifications of GA200TS60U

Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 200A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
20.068nF @ 30V
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant

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Fig. 15 - Typical Reverse Recovery vs. di
2 2 5
2 0 0
1 7 5
1 5 0
1 2 5
1 0 0
7 5
5 0 0
V = 3 6 0V
T = 1 25 °C
T = 2 5°C
R
J
J
1 0 0 0
d i /dt - (A /µ s)
f
1 5 0 0
I = 4 00 A
I = 20 0A
I = 1 00 A
F
F
F
2 0 0 0
f
/dt
Fig. 16 - Typical Recovery Current vs. di
2 5 0
2 0 0
1 5 0
1 0 0
5 0
0
5 0 0
I = 2 00 A
I = 1 00 A
I = 4 00 A
F
F
F
GA200TS60U
1 0 0 0
di /d t - (A /µs)
f
V = 3 6 0V
T = 1 25 °C
T = 2 5°C
R
J
J
1 5 0 0
f
/dt
7
2 0 0 0

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