GA200TS60U Vishay, GA200TS60U Datasheet - Page 3

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

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1000
100
10
140
120
100
80
60
40
20
0
0.5
Fig. 2 - Typical Output Characteristics
0.1

T = 125 C
S q u a re w a v e :
J
V
1.0
CE
, Collector-to-Emitter Voltage (V)
60 % of ra ted
°

Id e a l d io d e s
T = 25 C
I
J
vo ltag e
1.5
°

Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
2.0
GE
= 15V
(Load Current = I
2.5
1
3.0
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5.0
V
GE

10
T = 125 C
J
6.0
, Gate-to-Emitter Voltage (V)
GA200TS60U
For both:
D uty cy cle: 50%
T = 125°C
T
G ate drive as specified
P ow e r Dis sip ation =
°
J
s ink

= 90°C
T = 25 C
7.0
J

V
80µs PULSE WIDTH
CE
°
= 25V
120
8.0
W
100
3
9.0