GA200TS60U Vishay, GA200TS60U Datasheet - Page 8

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

GA200TS60U
Fig. 17c -
8
Fig. 17a -
I
V c c
LM
, E
td (o n )
1 0 % +V g
1 0 % Ic
on
, E
Test Waveforms for Circuit of Fig. 18a,
t1
off(diode)
Test Circuit for Measurement of
Defining E
V c e
tr
, t
rr
, Q
5 % V c e
9 0 % Ic
on
rr
, I
, t
G A T E V O L T A G E D .U .T .
rr
+ V g
d(on)
, t
d(on)
, t
r
, t
t2
E o n =
r
D U T V O L T A G E
A N D C U R R E N T
Ip k
, t
d(off)
t1
V ce ie d t
Vce Ic dt
t2
, t
Ic
f
Fig. 17b -
Fig. 17d -
+ V g e
Ic
Test Waveforms for Circuit of Fig. 18a, Defining
V p k
td (o ff)
D IO D E R E V E R S E
R E C O V E R Y E N E R G Y
Ic
1 0 % V c e
1 0 % V c c
tx
Test Waveforms for Circuit of Fig. 18a,
Defining E
t1
Irr
E
off
, t
V c e
d(off)
t3
9 0 % V g e
Ic
trr
rec
, t
tf
, t
f
rr
, Q
t2
9 0 % Ic
D IO D E R E C O V E R Y
W A V E FO R M S
t4
rr
E re c =
, I
E o f f =
1 0 % Irr
rr
www.irf.com
5 % Ic
Q rr =
t3
V d id d t
Vd Ic dt
t4
t1
Vce Ic dt
V c e ic d t
tx
t1 + 5 µ S
id d t
Ic dt
trr
V cc