GA200TS60U Vishay, GA200TS60U Datasheet - Page 4

• Manufacturer Part Number: GA200TS60U
• Description: IGBT FAST 600V 200A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA200TS60U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 200A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 20.068nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant

GA200TS60U
Fig. 4 - Maximum Collector Current vs. Case
4
240
200
160
120
0 . 0 1
80
40
0.1
0
0 . 0 0 0 1
1
25
D = 0 .5 0
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0 .2 0
0 .1 0
0 .0 2
0 .0 1
50
0 .0 5
T , Case Temperature ( C)
C
Temperature
0 . 0 0 1
75
(T H E R M A L R E S P O N S E )
S IN G L E P U L S E
100
0 . 0 1
t , R e cta n g u la r P u ls e D u ra tio n (s e c )
°
1
125
150
0.1
Fig. 5 - Typical Collector-to-Emitter Voltage
3.0
2.0
1.0
-60 -40 -20
1

V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Notes:
1. Duty factor D = t / t
2. Peak T = P
T , Junction Temperature ( C)
J
0
1 0
J
20
DM
40
x Z
1
60
thJC
2
P
80 100 120 140 160
DM
1 0 0
+ T
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I =

I =

I =
C
C
C
C
t
1
400
200
100
t 2
°
A
A
A
1 0 0 0
A